Stay ahead of the curve in the rapidly evolving world of portable electronics with this expert guide, which offers a deep dive into the advanced semiconductor materials and low-power design techniques essential for fabricating the next generation of high-performance micro and nano devices.
Table of ContentsPreface
1. Design of Advanced MOSFET ArchitecturesRemya Jayachandran and Salila Hegde
1.1 Introduction
1.2 History of Transistors
1.2.1 Evolution of Transistors
1.2.2 Non-Planar Device Architectures
1.3 SOI MOSFET: From Single Gate to Multigate
1.4 Current Non-Planar Device Architectures
1.4.1 FinFET
1.4.1.1 FinFET Advantages
1.4.1.2 FinFET Disadvantages
1.4.1.3 FinFET in Semiconductor Industries
1.4.1.4 Future of FinFET
1.4.2 GAAFET
1.4.2.1 GAAFET Advantages
1.4.2.2 Working of GAAFET
1.4.2.3 Advancement in GAA Device Design
1.4.2.4 Future of GAAFET
1.4.3 Reconfigurable FET (RFET)
1.4.3.1 Future of RFET
1.4.4 Tunnel FET
1.4.4.1 TFET Advantages
1.4.4.2 Future of TFET
1.5 Applications of Non-Planar Transistors in Analog and Digital Circuits
1.5.1 Applications in Digital Circuits
1.5.2 Applications in Analog Circuits
1.5.3 Design Considerations
1.5.4 Challenges and Future Trends
1.6 Conclusion
References
2. Multi Gate MOSFET ArchitecturesVrinda Gupta, L.G. Naveen Kumar and K.N.S. Santosh
2.1 Introduction
2.2 About Multi-Gate MOSFETs
2.3 Types of Multi-Gate MOSFETs
2.3.1 Double-Gate MOSFETs
2.3.1.1 Structure of DG MOSFET
2.3.1.2 Applications of DG MOSFETs
2.3.1.3 Design Challenges of DG MOSFETs
2.3.2 Tri-Gate MOSFETs
2.3.2.1 Structure of Tri-Gate MOSFET
2.3.2.2 Applications of Tri-Gate MOSFETs
2.3.2.3 Design Challenges of Tri-Gate MOSFETs
2.3.3 Gate-All-Around (GAA) MOSFETs
2.3.3.1 Structure of Gate-All-Around (GAA) MOSFET
2.3.3.2 Applications of Gate-All-Around (GAA) MOSFET
2.3.3.3 Design Challenges of Gate-All-Around (GAA) MOSFET
2.3.4 Omega-Gate MOSFET
2.3.4.1 Structure of Omega-Gate MOSFET
2.3.4.2 Applications of Omega-Gate MOSFET
2.3.4.3 Design Challenges of Omega-Gate MOSFET
2.4 Advantages of Multi-Gate MOSFETs
2.5 Conclusion
References
3. Design and Comparative Analysis of Hybrid DG-MOSFET with Conventional CMOS Using Visual TCADKushagra, Suman Lata Tripathi and Balwinder Raj
3.1 Introduction
3.2 Design Methodology
3.3 Device Architecture and Materials Description
3.4 Results and Discussion
3.4.1 N-Channel DG-MOSFET
3.4.2 P-Channel DG-MOSFET
3.5 CMOS Compatibility of Proposed n- & p-Channel DG-MOSFET
3.6 Hybrid DG-MOSFET
3.6.1 Device Simulation on TCAD
3.6.2 Hybrid DG-MOSFET Response
3.6.3 Electric Field & Potential Plot
3.7 Applications & Future Scope
3.8 Conclusion
Acknowledgement
References
4. Nano Devices for Comparator DesignsNiranjana C., Vineeth Kumar P. K., Jijesh J. J. and Lakshmi Manasa B.
4.1 Introduction
4.2 Experimental Methods and Materials
4.2.1 Carbon Nano Tubes
4.2.2 Potentials of Carbon Nanotubes (CNTs)
4.2.3 Design Considerations of CNTs
4.2.4 Experimental Demonstrations for CNTs
4.3 Graphene
4.3.1 Potentials of Graphene
4.3.2 Design Considerations of Graphene
4.3.3 Experimental Demonstrations for Graphene
4.4 Tunnel Field Effect Transistor
4.4.1 Potential of Tunnel Field Effect Transistor
4.4.2 Design Considerations of TFET
4.4.3 Experimental Demonstrations for TFET
4.5 Results and Discussion
4.5.1 Performance Parameters of Comparator Circuits
4.6 Conclusion
References
5. Nano Device for SRAM Memory ArraysAkey Sungheetha, Rajesh Sharma R. and Sheila Mahapatra
5.1 Introduction
5.2 Study
5.3 Methodology
5.3.1 Device Simulation and Modeling
5.3.2 Fabrication Techniques
5.3.3 SRAM Cell Design and Integration
5.3.4 Performance Evaluation
5.3.5 Variability and Reliability Analysis
5.4 Result and Discussion
5.4.1 Performance Comparison
5.4.2 Variability and Reliability
5.4.3 Scalability and Future Prospects
5.4.4 Integration Challenges
5.4.5 Economic Considerations
5.5 Conclusion
Bibliography
6. Technology Computer-Aided Design (TCAD) for Simulation of Advanced Transistor DesignP. Sivakumar, Shashi Kant Dargar and P. Harikrishnan
6.1 Introduction
6.2 Essentials of Device Simulation
6.2.1 TCAD: Key Features and Capabilities
6.3 Design and Simulation of MOSFET: STEP-BY-STEP
6.3.1 Material Selection
6.3.2 Structure Definition
6.4 Advanced MOSFET Structure Design
6.4.1 Simulation of GaN HEMT with Example and Case Studies
6.5 Conclusion and Future Scope
Acknowledgements
References
7. FETs for Biomedical Applications: Recent Developments and Prospects for the FutureAnbuselvi D., S. GraceInfantiya and D. Bharath
7.1 Introduction
7.1.1 Bio-FET and Solid-Liquid Interface
7.2 Applications of FET
7.2.1 Ion-Sensitive FETs (ISFETs)
7.2.2 Influenza
7.2.3 Cancer
7.2.4 Tear Sensors
7.2.5 Cardiovascular Disease (CVDs)/Acute Myocardial Infarction (AMI)
7.2.6 Diabetes
7.3 Prospects and Difficulties for Bio-FET
7.4 Conclusion
References
8. Efferent Circuit Design and Energy Consumption of Grayto-Binary (G2B) and Binary-to-Gray (B2G) Code Conversion Using QCA Nanoelectronic TechnologiesMukesh Patidar, Ankit Jain, Shreyaskumar Patel, Keshav Patidar and Hemanshi Chugh
8.1 Introduction
8.2 Literature Work
8.3 Synchronization Clocking Operation for Proposed Design
8.4 Proposed Design for Nanoelectronic Circuits
8.5 Result Analysis and Comparison
8.6 Conclusion
References
9. Asymmetrical Double Gate Junction Less FETLijin Wilson and Suman Lata Tripathi
9.1 Introduction
9.2 Simulated Device Dimensions and Material
9.3 Simulated Device Architecture Description
9.4 Result and Simulations
9.5 Subthreshold Performance
9.6 Comparison with Another Technology Node
9.7 Applications of Asymmetric Gate DG MOSFET
9.8 Conclusion
References
10. Smart Materials for Semiconductor Devices: Research, Characteristics and ApplicationsKrishan Arora
10.1 Introduction
10.2 Shrewd Materials
10.3 Types of Smart or Keen Materials
10.3.1 Shape Memory Combination
10.3.1.1 Thermoelectricity
10.3.1.2 Pseudoelasticity
10.3.1.3 Damping Capacity
10.3.2 Piezoelectric Materials
10.3.3 Magnetostrictive Materials
10.3.4 Chromic Materials
10.3.4.1 Photochromic
10.3.4.2 Thermochromic
10.3.4.3 Piezochromic
10.3.5 pH Delicate Materials
10.3.6 Magnetorheological and Electrorheological Fluids
10.4 Application of Savvy Materials
10.4.1 Walking Piezo Lever
10.4.2 Aviation Innovation
10.4.3 Atomic Businesses Keen Substances
10.5 Shrewdly Material
10.6 Conclusions
References
11. Nanotechnology for Energy Applications: Harnessing Nano and Artificial Intelligence for Sustainable EnergyHarpreet Kaur Channi, Ramandeep Sandhu, Deepika Ghai and Nimisha Singh
11.1 Introduction
11.1.1 Overview of Nanotechnology
11.1.2 Applications of Nanotechnology
11.1.3 Role of Artificial Intelligence in Energy Applications
11.1.4 Importance of Sustainable Hybrid Energy Solutions
11.2 Need of the Work
11.2.1 Nanotechnology in Energy Generation
11.2.2 Nanotechnology in Energy Storage
11.2.3 AI Optimization in Hybrid Energy Systems
11.3 Hybrid Renewable System: Case Study of Rural Region
11.3.1 Objectives of the Chapter
11.4 Methodology
11.4.1 Location Details
11.4.2 System Designing and Modeling
11.4.3 Main Outcomes of Hybrid Solar-Wind-Battery System
11.5 Results and Discussion
11.5.1 Energy Efficiency and Sustainability
11.5.2 Challenges and Future Directions
11.5.3 Regulatory and Ethical Considerations
11.6 Conclusion
References
12. Implementation and Analysis of Various Full Adder Configuration Using Cadence VirtuosoSpoorthi S.P., Bharathi S.H., Shipra Upadhyay and Chaithanya D.J.
12.1 Introduction
12.2 Adders
12.2.1 Half Adder
12.2.2 Full-Adder
12.2.3 Ripple Carry Adder
12.2.4 Carry Look-Ahead Adder
12.2.5 Carry-Save Adder
12.2.6 Parallel Prefix Adders
12.2.7 Serial Adder
12.3 CMOS Implementation of Adders
12.3.1 28T Full Adder
12.3.2 14T Full Adder
12.3.3 20T Full Adder
12.3.4 10T Full-Adder
12.3.5 8T Full-Adder
12.4 Implementation of Full-Adder 28T and 14T
12.4.1 Simulation Results
12.5 Conclusion
Bibliography
13. Process Corner Analysis of 4-Bit Look Up Table (LUT) Using 90nm CMOS TechnologyTalla. Narayana Swami, Shiridi Sravanthi, Suman Lata Tripathi and Yuli Sun Hariyani
13.1 Introduction
13.2 Look-Up Table (LUT)
13.3 Basic Blocks Used in Design of LUT at 90nm CMOS
13.3.1 2X1 Multiplexer
13.3.2 D-Flip Flop (DFF)
13.3.3 Schematic of 4 Bit-LUT
13.3.3.1 Functions Implementation Using 4-Bit LUT
13.4 Corner Analysis
13.5 Applications
13.5.1 Implementation of Digital Logic Functions
13.5.2 DSP Processors
13.5.3 Signal and Image Processing
13.6 Conclusion
References
14. Designing and Small Signal Analysis of Common Source Amplifier Using GaN Based HEMTYogesh Kumar Verma
14.1 Introduction
14.2 Device Structure
14.3 Results and Discussions
14.4 Conclusion
References
15. The 5th Generation: Major Implementation, Challenges and Massive MIMO TechnologyRashmi Roges, Sandeep Sharma and Praveen Kumar Malik
15.1 Introduction
15.2 Major Challenges Faced in 5G Implementation
15.2.1 Infrastructure
15.2.2 Cost
15.2.3 Testing of 5G
15.2.4 5G Backhaul
15.2.5 Security Concerns
15.3 Classification of 5G Services
15.4 Massive MIMO for 5G
15.5 Conclusion
References
16. Smart Nanomaterials: Revolutionizing Drug Delivery StrategiesJujhaar Singh Aidhen, Arjun Vitthal Chambarge, Chavan Aniket Navnath, Atharv Mohan Patil, Vedant Dnyandev Arjun, Jupinder Kaur and Rajan Vohra
16.1 Introduction
16.2 Disease Specific Drug Delivery
16.3 Synthesis of Nanomaterials for Drug Delivery
16.4 Location Specific Drug Delivery
16.5 Future Scope
16.6 Conclusion
References
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